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2SK2334(L), 2SK2334(S)
Silicon N-Channel MOS FET
November 1996 Application
High speed power switching
Features
* * * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche Ratings
Outline
DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S
2
3
23
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2SK2334(L), 2SK2334(S)
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW10 s, duty cycle 1 % 2. Value at Tc = 25 C 3. Value at Tch = 25 C, Rg 50 Symbol VDSS VGSS ID ID(pulse)* IDR IAP*
3 1
Ratings 60 20 20 80 20 20
Unit V V A A A A mJ W C C
EAR* Tch
3
34
2
Pch*
30 150 -55 to +150
Tstg
2
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2SK2334(L), 2SK2334(S)
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS IGSS VGS(off) Min 60 20 -- -- 1.0 -- -- Forward transfer admittance Input capacitance |yfs| Ciss 9 -- Typ -- -- -- -- -- 0.04 0.055 15 980 Max -- -- 10 100 2.25 0.055 0.07 -- -- Unit V V A A V S pF Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 10 A 1 VGS = 10 V* ID = 10 A 1 VGS = 4 V* ID = 10 A 1 VDS = 10 V* VDS = 10 V VGS = 0 f = 1 MHz
Zero gate voltage drain current IDSS Gate to source cutoff voltage Static drain to source on state RDS(on) resistance
Output capacitance Reverse transfer capacitance Turn-on delay time
Coss Crss td(on)
-- -- --
440 135 14
-- -- --
pF pF ns ID = 10 A VGS = 10 V RL = 3
Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test
tr td(off) tf VDF trr
-- -- -- -- --
90 180 125 1.0 90
-- -- -- -- --
ns ns ns V s IF = 20 A, VGS = 0 IF = 20 A, VGS = 0, diF / dt = 50 A / s
3
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2SK2334(L), 2SK2334(S)
Power vs. Temperature Derating 40
200 100 Maximum Safe Operation Area
Pch (W)
I D (A)
30
50 20 10
DC
10
10
PW
Op
s
s
Channel Dissipation
Drain Current
20
5 Operation in 2 1 0.5 0.2 Ta = 25 C 1
era
=1
tio
1m
0m s(
Tc
0
s
ho t)
this area is limited by R DS(on)
n(
1s
=2
5
10
C)
0
50
100
150 Tc (C)
200
Case Temperature
2 5 10 20 50 100 Drain to Source Voltage V DS (V)
Typical Output Characteristics 50 10 V 6V 5V Pulse Test
Typical Transfer Characteristics 20 V DS = 10 V Pulse Test
I D (A)
30 3.5 V 3V 2.5 V VGS = 2 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V)
ID Drain Current
4V
(A)
40
4.5 V
16
Drain Current
12
20
8
Tc = 75C 25C
10
4
-25C 1 2 3 Gate to Source Voltage 5 4 V GS (V)
0
4
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2SK2334(L), 2SK2334(S)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
V DS(on) (V)
Pulse Test
0.8 I D = 15 A 0.6 10 A 0.4 5A
Drain to Source On State Resistance R DS(on) ( )
1.0
Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0.5
0.2 0.1 VGS = 4 V 0.05 10 V 0.02 0.01 1 2 5 10 20 50 Drain Current I D (A) 100
Drain to Source Voltage
0.2
0
2 4 6 Gate to Source Voltage
8 V GS (V)
10
Static Drain to Source on State Resistance R DS(on) ( )
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance vs. Temperature 0.1 Pulse Test I D = 10 A 2 A, 5 A V GS = 4 V 2 A, 5 A, 10 A 10 V
50
Forward Transfer Admittance vs. Drain Current
0.08
20 10 5 2 1 0.5 0.1
Tc = -25 C 25 C 75 C
0.06
0.04
0.02 0 -40
V DS = 10 V Pulse Test 0.3 1 3 10 30 100 Drain Current I D (A)
0 40 80 120 160 Case Temperature Tc (C)
5
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2SK2334(L), 2SK2334(S)
Body to Drain Diode Reverse Recovery Time
Typical Capacitance vs. Drain to Source Voltage
10000
1000
Reverse Recovery Time trr (ns)
Capacitance C (pF)
500 200 100 50 20 10 0.1
3000 1000 300 100 30 10 0 10 20 30 Ciss Coss Crss
VGS = 0 f = 1 MHz
di/dt = 50 A/s V GS = 0, Ta = 25C 0.3 1 3 10 30 100 Reverse Drain Current I DR (A)
40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
V DS (V) V GS (V)
100
20
1000 500
Switching Characteristics V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1 % t d(off) tf
80 VGS 60 VDS V DD = 10 V 25 V 50 V
16
Switching Time t (ns)
Drain to Source Voltage
12
Gate to Source Voltage
200 100 50 20 10 0.3
40 I D = 20 A 20 V DD = 50 V 25 V 10 V 20 40 60 80 Gate Charge Qg (nc)
8
tr t d(on) 1 3 Drain Current 10 I D (A) 30
4 0 100
0
6
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2SK2334(L), 2SK2334(S)
Reverse Drain Current vs. Souece to Drain Voltage Pulse Test
Repetive Avalanche Energy E AR (mJ)
Maximun Avalanche Energy vs. Channel Temperature Derating 40 I AP = 20 A V DD = 25 V duty < 0.1 % Rg > 50
20 Reverse Drain Current I DR (A)
16
32
12 10 V 8 5V V GS = 0, -5 V
24
16
4
8 0 25
0
0.4
0.8
1.2
1.6
2.0
50
75
100
125
150
Source to Drain Voltage
V SD (V)
Channel Temperature Tch (C)
Avalanche Test Circuit and Waveform EAR = 1 2 * L * I AP * 2 VDSS VDSS - V DD
V DS Monitor
L I AP Monitor
V (BR)DSS I AP VDD ID V DS
Rg Vin 15 V
D. U. T
50 0 VDD
7
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2SK2334(L), 2SK2334(S)
Normalized Transient Thermal Impedance vs. Pulse Width 3
Normalized Transient Thermal Impedance s (t)
Tc = 25C 1 D=1 0.5
0.2
0.1 0.05
0.02
1 0.0
0.3
0.1
ch - c(t) = s (t) * ch - c ch - c = 4.17 C/W, Tc = 25 C
Pu lse
PDM PW T
0.03
1s
t ho
D=
PW T
0.01 10
100
1m
10 m Pulse Width
100 m PW (S)
1
10
Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% Vout Monitor
Waveform
90%
10% 90% td(off) tf
90% td(on) tr
8
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2SK2334(L), 2SK2334(S)
When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207
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Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071
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